參數(shù)資料
型號(hào)： TPCF8102
廠商： Toshiba Corporation
英文描述： Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
中文描述： 場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型（U型馬鞍山三）
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 224K
代理商： TPCF8102
TPCF8102
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
III
)
TPCF8102
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 24 m
(typ.)
High forward transfer admittance: |Y
fs
| = 14 S (typ.)
Low leakage current: I
DSS
=
10 μA (max) (V
DS
=
20 V)
Enhancement mode: V
th
=
0.5 to
1.2 V
(V
DS
=
10 V, I
D
=
200 μA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
20
V
Gate-source voltage
V
GSS
±
8
V
DC
(Note 1)
I
D
6
Drain current
Pulsed (Note 1)
I
DP
24
A
Drain power dissipation
(t
=
5 s)
(Note 2a)
P
D
2.5
W
Drain power dissipation
(t
=
5 s)
(Note 2b)
P
D
0.7
W
Single pulse avalanche energy (Note 3)
E
AS
5.9
mJ
Avalanche current
I
AR
3
A
Repetitive avalanche energy (Note 4)
E
AR
0.25
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2a)
R
th (ch-a)
50.0
°C/W
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2b)
R
th (ch-a)
178.6
°C/W
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4
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