參數(shù)資料
型號: TPCS8004
廠商: Toshiba Corporation
英文描述: Silicon N Channel MOS Type (Pi-MOSV)
中文描述: 硅?頻道馬鞍山類型(丕MOSV)
文件頁數(shù): 1/7頁
文件大小: 233K
代理商: TPCS8004
TPCS8004
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOSV)
TPCS8004
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 0.56
(typ.)
High forward transfer admittance: |Y
fs
| = 1.8 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 200 V)
Enhancement model: V
th
= 1.5~3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
200
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
200
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
1.3
Drain current
Pulse (Note 1)
I
DP
5.2
A
Drain power dissipation (t = 10 s)
(Note 2a)
P
D
1.5
Drain power dissipation (t = 10 s)
(Note 2b)
P
D
0.6
W
Single pulse avalanche energy Note3)
E
AS
1.05
mJ
Avalanche current
I
AR
1.3
A
Repetitive avalanche energy
(Note2a, Note 4)
E
AR
0.15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
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