參數(shù)資料
型號(hào)： TPCS8101
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型（U型馬鞍山二）
文件頁數(shù)： 1/7頁
文件大?。?/td> 323K
代理商： TPCS8101
TPCS8101
2003-02-20
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8101
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 15 m
(typ.)
High forward transfer admittance: |Y
fs
| = 12 S (typ.)
Low leakage current: I
DSS
=
10 μA (max) (V
DS
=
30 V)
Enhancement-mode: V
th
=
0.8~
2.0 V (V
DS
=
10 V, I
D
=
1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
= 20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±20
V
DC
(Note 1)
I
D
6
Drain current
Pulse (Note 1)
I
DP
24
A
Drain power dissipation
(t = 10 s)
(Note 2a)
P
D
1.5
W
Drain power dissipation
(t = 10 s)
(Note 2b)
P
D
0.6
W
Single pulse avalanche energy
(Note 3)
E
AS
46.8
mJ
Avalanche current
I
AR
6
A
Repetitive avalanche energy
(Note 2a, Note 4)
E
AR
0.15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
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