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參數(shù)資料
| 型號： | TPCS8102 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs |
| 中文描述： | 鋰離子電池應(yīng)用便攜式設(shè)備應(yīng)用筆記簿型電腦 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 392K |
| 代理商： | TPCS8102 |
TPCS8102
2002-05-17
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8102
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
z
Small footprint due to small and thin package
z
Low drain-source ON resistance: R
DS (ON)
= 16 m
(typ.)
z
High forward transfer admittance: |Y
fs
| = 17 S (typ.)
z
Low leakage current: I
DSS
=
10 μA (max) (V
DS
=
20 V)
z
Enhancement-mode: V
th
=
0.5~
1.2 V (V
DS
=
10 V, I
D
=
200 μA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
= 20 k
)
V
DGR
20
V
Gate-source voltage
V
GSS
±12
V
DC
(Note 1)
I
D
6
Drain current
Pulse (Note 1)
I
DP
24
A
Drain power dissipation
(t = 10 s)
(Note 2a)
P
D
1.5
W
Drain power dissipation
(t = 10 s)
(Note 2b)
P
D
0.6
W
Single pulse avalanche energy
(Note 3)
E
AS
46.8
mJ
Avalanche current
I
AR
6
A
Repetitive avalanche energy
(Note 2a, Note 4)
E
AR
0.15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPCS8102(TE12L) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 20V 6A 8-Pin TSSOP T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 20V 6A 8-TSSOP |
| TPCS8102(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH SGL -20V -6A TSSOP-8 |
| TPCS8102_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications |
| TPCS8104 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
| TPCS8104(TE12L,Q) | 功能描述:MOSFET P-ch -30V -11A 0.012 ohms single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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