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參數(shù)資料
| 型號： | TPCS8201 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山型（U型馬鞍山） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 314K |
| 代理商： | TPCS8201 |
TPCS8201
2003-02-20
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8201
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 22 m
(typ.)
High forward transfer admittance: |Y
fs
| =
1
3 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
= 20 V)
Enhancement-mode: V
th
= 0.5~
1
.2 V (V
DS
=
1
0 V, I
D
= 200 μA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
= 20k
Ω
)
V
DGR
20
V
Gate-source voltage
V
GSS
±12
V
D C
(Note 1)
I
D
5
Drain curren
Pulse
(Note 1)
I
DP
20
A
Single-device
operation
(Note 3a)
P
D (1)
1.1
Drain power
dissipation
(t = 10(Note 2a) Single-device value
at dual operation
(Note 3b)
P
D(2)
0.75
W
Single-device
operation
(Note 3a)
P
D (1)
0.6
Drain power
dissipation
(t = 10(Note 2b) Single-device value
at dual operation
(Note 3b)
P
D (2)
0.35
W
Single pulse avalanche energy
(Note 4)
E
AS
32.5
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
E
AR
0.075
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
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