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參數(shù)資料
| 型號(hào)： | TPCP8J01 |
| 廠(chǎng)商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) ?Silicon NPN Epitaxial Type |
| 中文描述： | 東芝多芯片設(shè)備硅P通道馬鞍山型（U型MOSIV）？硅npn型外延式 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | TPCP8J01 |
TPCP8J01
2004-07-14
1
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOS
IV
)
／
Silicon NPN Epitaxial Type
TPCP8J01
Notebook PC Applications
Portable Equipment Applications
Lead(Pb)-Free
Small mounting area due to small and thin package
Low drain-source ON resistance: P Channel R
DS
(ON)
= 27 m
(typ.)
High forward transfer admittance: P Channel |Y
fs
| = 9.6 S (typ.)
Low leakage current: I
DSS
=
10 μA (V
DS
=
32 V)
Enhancement-mode: P Channel V
th
=
0.8 to
2.0 V
(V
DS
=
10 V, I
D
=
1 mA)
Maximum Ratings
(Ta
=
25°C)
MOSFET
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
32
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
32
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
5.5
Drain current
Pulse (Note 1)
I
DP
22
A
Drain power dissipation
(t
=
5 s)
(Note 2a)
P
D
2.14
W
Drain power dissipation
(t
=
5 s)
(Note 2b)
P
D
1.06
W
Single pulse avalanche energy
(Note 3)
E
AS
5.8
mJ
Avalanche current
I
AR
3
A
Repetitive avalanche energy (Note 4)
E
AR
0.21
mJ
BRT
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
6
V
Collector current DC (Note 1)
I
C
100
mA
Collector power dissipation
P
C
200
mW
Common Maximum Ratings
(Ta=25°C )
Characteristics
Symbol
Rating
Unit
Junction temperature
T
J
150
°C
Storage temperature range
T
stg
55~150
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3V1G
Weight: 0.011 g (typ.)
Circuit Configuration
8
7
Marking
(Note5)
1
．
Emitter
2
．
Drain
3
．
Drain
4
．
Drain
5
．
Source
6
．
Gate
7
．
Base
8
．
Collector
8J01
1 2 3 4
8 7 6 5
※
1
2
3
4
6
5
R1
R2
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with caution.
Lot No.
0.33±0.05
0.28
+0.1
1.12
-0.12
2
0.475
0.65
2
A
0.05
M
2.9±0.1
4
1
5
8
0.8±0.05
0.17±0.02
B
B
0.05
M
A
S
0.025
S
1.12
-0.12
0.28
-0.11
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