- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365762 > SUD50N03-09P (Vishay Intertechnology,Inc.) N-Channel MOSFET, 30 V(D-S) PDF資料下載
參數(shù)資料
| 型號： | SUD50N03-09P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel MOSFET, 30 V(D-S) |
| 中文描述： | N溝道MOSFET，30V（D-S） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SUD50N03-09P |
SUD50N03-09P
Vishay Siliconix
www.vishay.com
2
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
30
V
Gate Threshold Voltage
1.0
3.0
Gate-Body Leakage
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
1
50
A
On-State Drain Current
b
I
D(on)
50
A
0.0076
0.0095
0.015
0.014
Drain-Source On-State Resistance
b
Drain Source On State Resistance
r
DS(on)
0.0115
Forward Transconductance
b
Dynamic
a
g
fs
20
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
2200
410
180
11
7.5
5.0
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
pF
16
= 15 V,
= 4.5 V, I
= 50 A
V
DS
V
GS
4.5 V, I
D
50 A
nC
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
0.5
1.5
2.1
9
80
22
8
15
120
35
12
V
= 15 V, R
= 0.3
50 A, V
GEN
= 10 V, R
= 2.5
ns
I
D
g
Pulsed Current
Diode Forward Voltage
b
I
SM
V
SD
t
rr
100
A
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ s
1.2
1.5
V
Source-Drain Reverse Recovery Time
35
70
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
30
60
90
120
0
2
4
6
8
10
0
30
60
90
120
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
V
GS
Gate-to-Source Voltage (V)
I
25 C
55 C
5 V
T
C
= 125 C
V
GS
= 10 thru 6 V
3 V
4 V
2 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUD50N03-09P-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SUD50N03-12P | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SUD50N03-16P | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SUD50N04-06H | N-Channel 40-V (D-S), 175∩ MOSFET |
| SUD50N04-07L | N-Channel 40-V (D-S), 175 Degree Celcious MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N03-09P-E3 | 功能描述:MOSFET 30V 63A 65.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-09P-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-CHANNEL 30-V (D-S) MOSFET |
| SUD50N03-09P-GE3 | 功能描述:MOSFET 30V 63A 65.2W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-09P-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:N CHANNEL MOSFET, 30V, 63A, Transistor Polarity:N Channel, Continuous Drain Curr |
| SUD50N03-10 | 功能描述:MOSFET 30V 15A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。