參數(shù)資料
型號: SUD50N04-06H
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 40-V (D-S), 175∩ MOSFET
中文描述: N溝道40五(副),175∩MOSFET的
文件頁數(shù): 1/5頁
文件大?。?/td> 69K
代理商: SUD50N04-06H
FEATURES
TrenchFET Power MOSFETS
175 C Junction Temperature
High Threshold Voltage At High Temperature
APPLICATIONS
Automotive Such As:
High-Side Switch
Motor Drives
12-V Battery
SUD50N04-06H
Vishay Siliconix
Document Number: 72860
S-42058—Rev. B, 15-Nov-04
www.vishay.com
1
N-Channel 40-V (D-S), 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
( )
0.006 @ V
GS
= 10 V
I
D
(A)
c
109
Q
g
(Typ)
95
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information: SUD50N04-06H—E3
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
GS
40
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
T
C
= 100 C
I
D
109
c
77
c
A
Pulsed Drain Current
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
100
Avalanche Current (Single Pulse)
Repetitive Avalanche Energy (Single Pulse)
a
50
L = 0.1 mH
125
mJ
Power Dissipation
T
C
= 25 C
136
W
Operating Junction and Storage Temperature Range
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient
t A bi
b
t
10 sec
R
thJA
15
18
Steady State
40
50
C/W
Junction-to-Case
R
thJC
0.85
1.1
Notes:
a.
b.
c.
Duty cycle
Surface mounted on 1” FR4 board.
Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
1%.
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