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參數(shù)資料
| 型號： | SUD50N06-09L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S), 175C MOSFET; Logic Level; |
| 中文描述： | N通道60V（D-S）175℃ MOSFET，邏輯電平 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SUD50N06-09L |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
APPLICATIONS
Automotive
- ABS
- Motor Drives
- Fuel Injection
SUD50N06-09L
Vishay Siliconix
New Product
Document Number: 72004
S-21714—Rev. A, 07-Oct-02
www.vishay.com
1
N-Channel 60-V (D-S), 175 C MOSFET, Logic Level
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
0.0093 @ V
GS
= 10 V
I
D
(A)
a
50
60
0.0122 @ V
GS
= 4.5 V
50
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD50N06-09L
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
T
C
= 100 C
50
Continuous Drain Current
(T
J
= 175 C)
b
I
D
50
a
Pulsed Drain Current
I
DM
I
S
I
AR
E
AR
100
A
Continuous Source Current (Diode Conduction)
50
a
Avalanche Current
50
Repetitive Avalanche Energy (Duty Cycle
1%)
L = 0.1 mH
125
mJ
T
C
= 25 C
T
A
= 25 C
100
Maximum Power Dissipation
P
D
3
b
, 8.3
b, c
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Limit
Unit
t
10 sec.
15
18
Maximum Junction-to-Ambient
Steady State
R
thJA
40
50
C/W
Maximum Junction-to-Case
R
thJC
1.2
1.5
Notes:
a.
b.
c.
Package limited.
Surface mounted on 1” x 1” FR4 Board, t
t
10 sec.
10 sec.
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PDF描述 |
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| SUD50N06-16 | N-Channel 60-V (D-S) 175 Degreee Celcious MOSFET |
| SUD70N02-03P | N-Channel 20-V (D-S) 175 Degrees Celcious MOSFET |
| SUD70N02-04P | N-Channel 20-V (D-S) 175 MOSFET |
| SUM110N03 | N-Channel 30-V (D-S) 175C MOSFET |
| SUM110N03-03 | N-Channel 30-V (D-S) 175C MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N06-09L_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) 175Celsius MOSFET, Logic Level |
| SUD50N06-09L-3E | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 50A 3PIN TO-252 - Rail/Tube |
| SUD50N06-09L-E3 | 功能描述:MOSFET 60V 50A 136W 9.3mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N06-09L-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD50N06-12 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 63A 3-Pin(2+Tab) DPAK |
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