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參數(shù)資料
| 型號(hào)： | SUD50N04-06H |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 40-V (D-S), 175∩ MOSFET |
| 中文描述： | N溝道40五（副），175∩MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 69K |
| 代理商： | SUD50N04-06H |
SUD50N04-06H
Vishay Siliconix
www.vishay.com
2
Document Number: 72860
S-42058—Rev. B, 15-Nov-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
3.4
5.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 40 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 20 A
0.0049
0.006
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.009
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.012
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
20
50
S
Dynamic
b
Input Capacitance
C
iss
6700
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
600
pF
Reversen Transfer Capacitance
C
rss
320
Total Gate Charge
c
Q
g
95
Gate-Source Charge
c
Q
gs
V
= 20 V,
V
= 10 V, I
= 50 A
DS
GS
37
nC
Gate-Drain Charge
c
Q
gd
D
21
Gate Resistance
R
g
f = 1.0 MHz
1.7
Turn-On Delay Time
c
t
d(on)
20
30
Rise Time
c
t
r
= 20 V, R
= 0.4
V
DD
20 V, R
L
0.4
50 A, V
GEN
= 10 V, R
= 2.5
95
145
ns
Turn-Off Delay Time
c
t
d(off)
I
D
50
75
Fall Time
c
t
f
g
12
20
Source-Drain Ciode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
50
A
Pulsed Current
I
SM
100
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
0.90
1.50
V
Reverse Recovery Time
t
rr
I
F
= 30 A, di/dt = 100 A/ s
40
60
ns
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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|---|---|
| SUD50N04-06H-E3 | 功能描述:MOSFET 40V 109A 136W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N04-06P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175 °C MOSFET |
| SUD50N04-07 | 制造商:SHENZHENFREESCALE 制造商全稱:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:N-Channel 40 V (D-S) 175 ?°C MOSFET |
| SUD50N04-07L | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 40V 65A 3-Pin(2+Tab) DPAK 制造商:Vishay Intertechnologies 功能描述:OBSOLETE - USE SUD50N04-07-E3 |
| SUD50N04-07L-E3 | 功能描述:MOSFET 40V 65A 65W 7.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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