參數(shù)資料
型號： SUD50N04-07L
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 40-V (D-S), 175 Degree Celcious MOSFET
中文描述： N溝道40五（副），175度Celcious MOSFET的
文件頁數(shù)： 1/5頁
文件大小： 73K
代理商： SUD50N04-07L
FEATURES
TrenchFET Power MOSFETS
175 C Junction Temperature
Low Threshold
APPLICATIONS
Motor Control
Automotive
-
12-V Boardnet
SUD50N04-07L
Vishay Siliconix
New Product
Document Number: 72344
S-32079—Rev. B, 13-Oct-03
www.vishay.com
1
N-Channel 40-V (D-S), 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
0.0074 @ V
GS
= 10 V
0.011 @ V
GS
= 4.5 V
I
D
(A)
c
65
40
54
D
G
S
TO-252
S
G
D
Top View
Drain Connected to Tab
N-Channel MOSFET
Ordering Information: SUD50N04-07L
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
GS
40
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
T
C
= 100 C
I
D
65
c
46
c
A
Pulsed Drain Current
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
100
Avalanche Current
Repetitive Avalanche Energy
a
40
L = 0.1 mH
80
mJ
Power Dissipation
T
C
= 25 C
65
W
Operating Junction and Storage Temperature Range
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient
t A bi
b
t
10 sec
R
thJA
18
22
Steady State
40
50
C/W
Junction-to-Case
R
thJC
1.9
2.3
Notes:
a.
b.
c.
Duty cycle
Surface mounted on 1” FR4 board.
Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
1%.
相關(guān)PDF資料
PDF描述
SUD50N06-08H N-Channel 60-V (D-S) 175c MOSFET
SUD50N06-09L N-Channel 60-V (D-S), 175C MOSFET; Logic Level;
SUD50N06-16 N-Channel 60-V (D-S) 175 Degreee Celcious MOSFET
SUD70N02-03P N-Channel 20-V (D-S) 175 Degrees Celcious MOSFET
SUD70N02-04P N-Channel 20-V (D-S) 175 MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUD50N04-07L-E3 功能描述:MOSFET 40V 65A 65W 7.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N04-09H-E3 功能描述:MOSFET 40V 50A 83.3W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N04-10P-E3 功能描述:MOSFET 40V 20A 53.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N04-16P 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175 °C MOSFET
SUD50N04-16P-E3 功能描述:MOSFET 40V 20A 35.7W 16mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*