參數(shù)資料
型號(hào)： SUD50N03-16P
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 67K
代理商： SUD50N03-16P
FEATURES
TrenchFET Power MOSFET
PWM Optimized
100% Rg
Tested
APPLICATIONS
High-Side DC/DC
Desktop
Server
DDR DC/DC Converter
SUD50N03-16P
Vishay Siliconix
New Product
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a
30
0.016 @ V
GS
= 10 V
15
0.024 @ V
GS
= 4.5 V
12
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information: SUD50N03-16P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
T
C
= 25 C
37
Continuous Drain Current
a
T
A
= 25 C
I
D
15
T
A
= 100 C
10.6
A
Pulsed Drain Current
I
DM
40
Continuous Source Current (Diode Conduction)
a
I
S
5
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
25
Single Pulse Avalanche Energy
E
AS
31.25
mJ
Maximum Power Dissipation
T
C
= 25 C
P
D
40.8
W
T
A
= 25 C
6.5
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
18
23
Steady State
40
50
C/W
Maximum Junction-to-Case
R
thJC
3.0
3.7
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
相關(guān)PDF資料
PDF描述
SUD50N04-06H N-Channel 40-V (D-S), 175∩ MOSFET
SUD50N04-07L N-Channel 40-V (D-S), 175 Degree Celcious MOSFET
SUD50N06-08H N-Channel 60-V (D-S) 175c MOSFET
SUD50N06-09L N-Channel 60-V (D-S), 175C MOSFET; Logic Level;
SUD50N06-16 N-Channel 60-V (D-S) 175 Degreee Celcious MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUD50N03-16P-E3 功能描述:MOSFET 30V 15A 40.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N03-16P-GE3 功能描述:MOSFET 30V 15A 40.8W 16mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N03-7M3P-E3 功能描述:MOSFET 30V 50A 65A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N04-05L 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175 C MOSFET
SUD50N04-05L-E3 功能描述:MOSFET 40V 115A 136W 5.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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