參數(shù)資料
型號： SUD50N03-09P
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel MOSFET, 30 V(D-S)
中文描述： N溝道MOSFET，30V（D-S）
文件頁數(shù)： 1/4頁
文件大小： 53K
代理商： SUD50N03-09P
FEATURES
TrenchFET Power MOSFET
Optimized for High- or Low-Side
100% R
g
Tested
APPLICATIONS
DC/DC Converters
Synchronous Rectifiers
SUD50N03-09P
Vishay Siliconix
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
b
30
0.0095 @ V
GS
= 10 V
63
b
0.014 @ V
GS
= 4.5 V
52
b
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information:
SUD50N03-09P
SUD50N03-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
a
T
C
= 25 C
I
D
63
b
T
C
= 100 C
44.5
b
Pulsed Drain Current
I
DM
50
A
Continuous Source Current (Diode Conduction)
a
I
S
10
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
35
Single Pulse Avalanche Energy
E
AS
61
mJ
Maximum Power Dissipation
T
C
= 25 C
P
D
65.2
W
T
A
= 25 C
7.5
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
16
20
Steady State
40
50
C/W
Maximum Junction-to-Case
R
thJC
1.8
2.3
Notes
a.
b.
Surface Mounted on FR4 Board, t
Based on maximum allowable Junction Temperature, package limitation current is 50 A.
10 sec.
相關PDF資料
PDF描述
SUD50N03-09P-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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相關代理商/技術參數(shù)
參數(shù)描述
SUD50N03-09P-E3 功能描述:MOSFET 30V 63A 65.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N03-09P-E3/BKN 制造商:Vishay Siliconix 功能描述:N-CHANNEL 30-V (D-S) MOSFET
SUD50N03-09P-GE3 功能描述:MOSFET 30V 63A 65.2W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N03-09P-T1-E3 制造商:Vishay Intertechnologies 功能描述:N CHANNEL MOSFET, 30V, 63A, Transistor Polarity:N Channel, Continuous Drain Curr
SUD50N03-10 功能描述:MOSFET 30V 15A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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