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參數(shù)資料
| 型號： | STW9NA60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOSFET) |
| 中文描述： | N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式快速功率MOSFET的） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 123K |
| 代理商： | STW9NA60 |
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STW9NA60-STH9NA60FI
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STW9NA80 | N-Channel 800V-0.85Ω-9.1A - TO-247/ISOWATT218 Fast Power MOS Transistor(Ｎ溝道快速功率ＭＯＳ晶體管) |
| STW9NB80 | N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET |
| STW9NB90 | N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET |
| STW9NC70Z | N-CHANNEL 700V - 0.90 ohm - 7.5A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| STW9NC80Z | N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW9NA80 | 制造商:STMicroelectronics 功能描述: |
| STW9NB80 | 功能描述:MOSFET N-Ch 800 Volt 9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW9NB90 | 功能描述:MOSFET N-CH 900V 9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW9NC70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.90 ohm - 7.5A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| STW9NC80Z | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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