參數(shù)資料
型號(hào)： STW9NC80Z
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH⑩III MOSFET
中文描述： N溝道800V的- 0.82ohm -輸出高達(dá)9.4A至247齊納保護(hù)PowerMESH⑩三MOSFET的
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 248K
代理商： STW9NC80Z
1/8
September 2002
STW9NC80Z
N-CHANNEL 800V - 0.82
- 9.4A TO-247
Zener-Protected PowerMESHIII MOSFET
(1)I
SD
≤
9.4A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
n
TYPICAL R
DS
(on) = 0.82
n
EXTREMELY HIGH dv/dt CAPABILITY
n
GATE-TO-SOURCE ZENER DIODES
n
100% AVALANCHE TESTED
n
VERY LOW INTRINSIC CAPACITANCES
n
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
n
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(1)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
I
GS
Gate-source Current
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
dv/dt(
G
)
Peak Diode Recovery voltage slope
V
ISO
Insulation Winthstand Voltage (DC)
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW9NC80Z
800 V
<0.9
9.4 A
Parameter
Value
Unit
800
V
800
V
±25
V
9.4
A
5.9
A
38
A
190
W
1.52
W/°C
±50
mA
4
KV
3
V/ns
--
V
–65 to 150
°C
150
°C
TO-247
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW9NK60Z 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STW9NK70Z 功能描述:MOSFET N Ch 700V 1 OHM 7.5A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW9NK90Z 功能描述:MOSFET N-Ch 900 Volt 8 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW9NK95Z 制造商:STMicroelectronics 功能描述:MSOFET N-CH 950V 7A TO-247 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 950V 7A TO247
STW9Q14BE 制造商:Seoul Semiconductor 功能描述:
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