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參數(shù)資料
| 型號： | STW9NC80Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道800V的- 0.82ohm -輸出高達(dá)9.4A至247齊納保護(hù)PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 248K |
| 代理商： | STW9NC80Z |
3/8
STW9NC80Z
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
Symbol
t
d(on)
Turn-on Delay Time
SWITCHING OFF (INDUCTIVE LOAD)
Symbol
t
r(Voff)
Off-voltage Rise Time
t
f
Fall Time
t
c
Cross-over Time
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Parameter
Test Conditions
V
DD
= 400V, I
D
= 4.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 640V, I
D
= 9 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
35
ns
t
r
Rise Time
16
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
72.2
101
nC
Gate-Source Charge
19.5
nC
Gate-Drain Charge
24.3
nC
Parameter
Test Conditions
V
DD
= 640V, I
D
= 9 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
32
ns
42
ns
67
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
9.4
A
Source-drain Current (pulsed)
38
A
Forward On Voltage
I
SD
= 9 A, V
GS
= 0
I
SD
= 9 A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
730
ns
Reverse Recovery Charge
7.2
μC
Reverse Recovery Current
19.5
A
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
25
Typ.
Max.
Unit
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
GS
= 50 mA, V
GS
= 0
90
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| STW9NK60Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
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| STW9NK95Z | 制造商:STMicroelectronics 功能描述:MSOFET N-CH 950V 7A TO-247 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 950V 7A TO247 |
| STW9Q14BE | 制造商:Seoul Semiconductor 功能描述: |
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