參數(shù)資料
型號: STW9NC80Z
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH⑩III MOSFET
中文描述: N溝道800V的- 0.82ohm -輸出高達9.4A至247齊納保護PowerMESH⑩三MOSFET的
文件頁數(shù): 2/8頁
文件大?。?/td> 248K
代理商: STW9NC80Z
STW9NC80Z
2/8
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
0.66
30
0.1
°C/W
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
9.4
Unit
A
350
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
800
Typ.
Max.
Unit
V
I
D
= 1 mA, V
GS
= 0
1
V/°C
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±20V
±10
μA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 4.7A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
0.82
0.9
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
9.4
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=4.7A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
13
Max.
Unit
S
g
fs
Forward Transconductance
C
iss
C
oss
Input Capacitance
3500
pF
Output Capacitance
230
pF
C
rss
Reverse Transfer
Capacitance
25
pF
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