參數(shù)資料
型號(hào): STW9NC70Z
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 700V - 0.90 ohm - 7.5A TO-247 Zener-Protected PowerMESH⑩III MOSFET
中文描述: N溝道高達(dá)700V - 0.90歐姆- 7.5A的到247齊納保護(hù)PowerMESH⑩三MOSFET的
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 248K
代理商: STW9NC70Z
1/8
March 2001
STW9NC70Z
N-CHANNEL 700V - 0.90
- 7.5A TO-247
Zener-Protected PowerMESHIII MOSFET
I
TYPICAL R
DS
(on) = 0.9
I
EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
I
GS
Gate-source Current (DC)
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)I
SD
7.5A, di/dt
100A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STW9NC70Z
700 V
< 1.2
7.5A
Parameter
Value
Unit
700
V
700
V
±25
V
7.5
A
4.7
A
30
A
160
W
1.28
W/°C
±50
mA
3
KV
3
V/ns
–65 to 150
°C
150
°C
TO-247
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