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參數(shù)資料
| 型號： | STW9NC70Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700V - 0.90 ohm - 7.5A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達(dá)700V - 0.90歐姆- 7.5A的到247齊納保護(hù)PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 248K |
| 代理商： | STW9NC70Z |
3/8
STW9NC70Z
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
Symbol
t
d(on)
Turn-on Delay Time
SWITCHING OFF (INDUCTIVE LOAD)
Symbol
t
r(Voff)
Off-voltage Rise Time
t
f
Fall Time
t
c
Cross-over Time
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Test Conditions
V
DD
= 350V, I
D
= 3.75A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 560V, I
D
= 7.5 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
30
ns
t
r
Rise Time
10
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
55
77
nC
Gate-Source Charge
14
nC
Gate-Drain Charge
21
nC
Parameter
Test Conditions
V
DD
= 560V, I
D
= 7.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
15
ns
12
ns
20
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
7.5
A
Source-drain Current (pulsed)
30
A
Forward On Voltage
I
SD
= 7.5 A, V
GS
= 0
I
SD
= 7.5 A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
680
ns
Reverse Recovery Charge
7.1
μC
Reverse Recovery Current
21
A
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
25
Typ.
Max.
Unit
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
GS
= 50 mA
90
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