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參數(shù)資料
| 型號(hào)： | STW38NB20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式PowerMESHTM MOSFET的（不適用溝道增強(qiáng)模式MOSFET的） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | STW38NB20 |
STW38NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.052
I
EXTREMELY HIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
GATE CHARGE MINIMIZED
I
REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLY (SMPS)
I
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
200
±
30
V
V
GS
V
I
D
I
D
38
A
24
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
152
A
P
tot
180
W
Derating Factor
1.44
W/
o
C
dv/dt
(1)
Peak Diode Recovery voltage slope
5.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
38 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
January 1998
150
TYPE
V
DSS
R
DS(on)
< 0.065
I
D
STW38NB20
200 V
38 A
TO-247
1
2
3
1/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW38NB20 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
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| STW3N150 | 功能描述:MOSFET 1500V 6Ohm 2.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW3N170 | 功能描述:N-CHANNEL 1700 V, 7 OHM TYP., 2. 制造商:stmicroelectronics 系列:PowerMESH?? 零件狀態(tài):有效 標(biāo)準(zhǔn)包裝:30 |
| STW40100C | 功能描述:DIODE ARRAY SCHOTTKY 100V TO247 制造商:smc diode solutions 系列:- 包裝:管件 零件狀態(tài):有效 二極管配置:1 對(duì)共陰極 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:100V 電流 - 平均整流（Io）（每二極管）:- 不同 If 時(shí)的電壓 - 正向（Vf）:750mV @ 20A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:- 不同?Vr 時(shí)的電流 - 反向漏電流:1mA @ 100V 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商器件封裝:TO-247AD 標(biāo)準(zhǔn)包裝:30 |
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