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參數(shù)資料
| 型號： | STW6NB100 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET |
| 中文描述： | ? -頻道1000V - 2.3ohm - 5.4A -對MOSFET的247 PowerMESH |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | STW6NB100 |
STW6NB100
N - CHANNEL 1000V - 2.3
- 5.4A - TO-247
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 2.3
I
EXTREMELYHIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGERATING
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using
STMicroelectronics has designed an advanced
family
of
power
Mosfets
performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R
DS
(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
the
latest
high
voltage
technology,
with
outstanding
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
October 1999
1
2
3
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
1000
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
1000
V
±
30
5.4
V
A
3.4
A
21
A
160
W
1.28
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4
V/ns
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
o
C
(
1
) I
SD
≤
5.4A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 2.8
I
D
STW6NB100
1000 V
5.4 A
1/8
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STW6NB90 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW6NC90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| STW6NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| STW6NK70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 700V - 1.5Ω - 5A - TO-220/TO-220FP Zener-protected SuperMESH? Power MOSFET |
| STW70N10F4 | 功能描述:MOSFET N-Ch 100 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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