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參數(shù)資料
| 型號： | STW6NB100 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET |
| 中文描述： | ? -頻道1000V - 2.3ohm - 5.4A -對MOSFET的247 PowerMESH |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 86K |
| 代理商： | STW6NB100 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.78
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
5.4
A
E
AS
373
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A
V
GS
= 0
1000
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
μ
A
μ
A
nA
I
GSS
V
GS
=
±
30 V
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10 V
I
D
= 2.7 A
2.5
2.8
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
6
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 2.7 A
1.5
3
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1500
180
17
pF
pF
pF
STW6NB100
2/8
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