參數(shù)資料
型號: STP4N150
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET
中文描述: N溝道1500V的- 5 -第4A TO-220/TO-247高電壓MOSFET的PowerMESH
文件頁數(shù): 1/11頁
文件大?。?/td> 310K
代理商: STP4N150
1/11
July 2005
STP4N150
STW4N150
N-CHANNEL 1500V - 5
- 4A TO-220/TO-247
Very High Voltage PowerMESH MOSFET
Table 1: General Features
I
TYPICAL R
DS
(on) = 5
I
AVALANCHE RUGGEDNESS
I
GATE CHARGE MINIMIZED
I
VERY LOW INTRINSIC CAPACITANCES
I
HIGH SPEED SWITCHING
DESCRIPTION
Using the well consolidated high voltage MESH
OVERLAY process, STMicroelectronics has de-
signed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP4N150
STW4N150
1500 V
1500 V
< 7
< 7
4 A
4 A
160 W
160 W
TO-220
1
2
3
TO-247
1
2
3
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP4N150
P4N150
TO-220
TUBE
STW4N150
W4N150
TO-247
TUBE
Rev. 3
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STP4N52K3 功能描述:MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube