參數(shù)資料
型號: STP4N150
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET
中文描述: N溝道1500V的- 5 -第4A TO-220/TO-247高電壓MOSFET的PowerMESH
文件頁數(shù): 2/11頁
文件大?。?/td> 310K
代理商: STP4N150
STP4N150 - STW4N150
2/11
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
Parameter
Test Conditions
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating,T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static Drain-source On
Resistance
Parameter
Value
Unit
1500
V
1500
V
± 30
V
4
A
2.5
A
12
A
160
W
1
W/
°
C
Operating Junction Temperature
-55 to 150
°
C
TO-220
TO-247
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.78
°
C/W
°
C/W
62.5
50
Parameter
Max Value
4
Unit
A
350
mJ
Min.
1500
Typ.
Max.
Unit
V
I
D
= 1 mA, V
GS
= 0
V
DS
= Max Rating
10
500
μA
μA
V
GS
= ± 30 V
± 100
nA
3
4
5
V
V
GS
= 10 V, I
D
= 2 A
5
7
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