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參數(shù)資料
| 型號： | STP4N150 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET |
| 中文描述： | N溝道1500V的- 5 -第4A TO-220/TO-247高電壓MOSFET的PowerMESH |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 310K |
| 代理商： | STP4N150 |
3/11
STP4N150 - STW4N150
ELECTRICAL CHARACTERISTICS
(CONTINUED)
Table 7: Dynamic
Symbol
Parameter
g
fs
(1)
Forward Transconductance
C
iss
C
oss
C
rss
Reverse Transfer Capacitance
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Gate-Drain Charge
Table 8: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Test Conditions
V
DS
= 30 V , I
D
= 2 A
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
Min.
Typ.
3.5
Max.
Unit
S
Input Capacitance
Output Capacitance
1300
120
12
pF
pF
pF
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
V
DD
= 750 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 10 V
(see Figure 19)
35
30
45
45
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
V
DD
= 600 V, I
D
= 4 A,
V
GS
= 10 V
(see Figure 22)
30
10
9
50
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
4
12
Unit
A
A
Source-drain Current
I
SD
= 4 A, V
GS
= 0
I
SD
= 4 A, di/dt = 100 A/μs
V
DD
= 45V
(see Figure 20)
2
V
Reverse Recovery Time
Reverse Recovery Charge
510
3
12
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 4 A, di/dt = 100 A/μs
V
DD
= 45V, T
j
= 150
°
C
(see Figure 20)
650
4
12.6
ns
μC
A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| STP4N150_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 1500V - 5ヘ - 4A - TO-220/TO-247 Very high PowerMESH⑩ Power MOSFET |
| STP4N20 | 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 200V 4A 3PIN TO-220 - Rail/Tube |
| STP4N40 | 制造商:SIPEX 制造商全稱:Sipex Corporation 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP4N40FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-220VAR |
| STP4N52K3 | 功能描述:MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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