參數(shù)資料
型號(hào)： STS1C1S250
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
中文描述： N溝道250V - 0.9Ohm - 0.75A的SO - 8 P溝道250V - 2.1Ohm - 0.6A的SO - 8封裝功率MOSFET網(wǎng)格密胺
文件頁(yè)數(shù)： 3/10頁(yè)
文件大小： 447K
代理商： STS1C1S250
3/10
STS1C1S250
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
SOURCE DRAIN DIODE
Symbol
I
SD
GATE-SOURCE ZENER DIODE
Symbol
Gate-Source Breakdown
Voltage
(4) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(5) Pulse width limited by safe operating area
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Test Conditions
N-CHANNEL
V
DD
= 125V, I
D
= 1.5A
R
G
= 4.7
V
GS
= 10V
P-CHANNEL
V
DD
= 125V, I
D
= 1.5A
R
G
= 4.7
V
GS
= 10V
(Resistive, see Figure 3)
N-CHANNEL
V
DD
=200V, I
D
=1.5A,
V
GS
= 10V
P-CHANNEL
V
DD
= 200V, I
D
= 1.5A,
V
GS
= 10V
Min.
Typ.
9
12
Max.
Unit
ns
ns
t
r
Rise Time
n-ch
p-ch
n-ch
p-ch
11
22
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
15
16
1.9
1.4
7
7.6
20
21
nC
nC
nC
nC
nC
nC
Parameter
Test Conditions
N-CHANNEL
V
DD
= 125V, I
D
= 1.5A,
R
G
= 4.7
,
V
GS
= 10V
P-CHANNEL
V
DD
= 200V, I
D
= 1.5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
n-ch
p-ch
n-ch
p-ch
31
29.5
11
7
ns
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
0.75
0.6
3
2.4
Unit
A
A
A
A
I
SDM
(4)
Source-drain Current
Source-drain Current (pulsed)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
V
SD
(5)
Forward On Voltage
I
SD
= 3A, V
GS
= 0
I
SD
= 3A, V
GS
= 0
N-CHANNEL
I
SD
= 0.8A, di/dt = 100A/μs,
V
DD
= 50V, T
j
= 150°C
P-CHANNEL
I
SD
= 0.60A, di/dt = 100A/μs,
V
DD
= 40V, T
j
= 150°C
(see test circuit, Figure 5)
1.5
1.5
V
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Curren
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
127
143
450
806
7
11
ns
ns
nC
nC
A
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Igs=± 500 μA (Open Drain)
± 25
V
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