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參數(shù)資料
| 型號： | STS1C1S250 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET |
| 中文描述： | N溝道250V - 0.9Ohm - 0.75A的SO - 8 P溝道250V - 2.1Ohm - 0.6A的SO - 8封裝功率MOSFET網(wǎng)格密胺 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 447K |
| 代理商： | STS1C1S250 |
STS1C1S250
2/10
THERMAL DATA
Rthj-amb (2)
(2) Mounted on 0.5 in2 pad of 2oz. copper.
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 μA, V
GS
= 0
P-CHANNEL
I
D
= 250 μA, V
GS
= 0
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
ON (1)
Symbol
V
GS(th)
DYNAMIC
Symbol
C
iss
(3) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Thermal Resistance Junction-ambient Max (Single Operating)
(Dual Operating)
62.5
78
°C/W
Test Conditions
N-CHANNEL
Min.
250
Typ.
Max.
Unit
V
n-ch
p-ch
250
V
V
DS
= Max Rating
n-ch
p-ch
n-ch
p-ch
1
1
10
10
μA
μA
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±20V
n-ch
p-ch
±10
±10
μA
μA
Parameter
Test Conditions
N-CHANNEL
V
DS
= V
GS
, I
D
= 250μA
P-CHANNEL
V
DS
= V
GS
, I
D
= 250μA
N-CHANNEL
V
GS
= 10V, I
D
= 0.40A
P-CHANNEL
V
GS
= 10V, I
D
= 0.30A
Min.
2
Typ.
3
Max.
4
Unit
V
Gate Threshold Voltage
n-ch
p-ch
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
n-ch
p-ch
0.9
2.1
1.4
2.8
Parameter
Test Conditions
N-CHANNEL
V
DS
= 25V, f = 1 MHz, V
GS
= 0
P-CHANNEL
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
325
260
51
52
24
25.5
6
6
Max.
Unit
pF
pF
pF
pF
pF
pF
Input Capacitance
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
C
oss
Output Capacitance
C
rss
Reverse Transfer
Capacitance
Gate Input Resistance
R
g
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
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