參數(shù)資料
型號： STS1C1S250
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
中文描述： N溝道250V - 0.9Ohm - 0.75A的SO - 8 P溝道250V - 2.1Ohm - 0.6A的SO - 8封裝功率MOSFET網(wǎng)格密胺
文件頁數(shù)： 1/10頁
文件大?。?/td> 447K
代理商： STS1C1S250
N-CHANNEL 250V - 0.9
- 0.75A SO-8
P-CHANNEL 250V - 2.1
- 0.6A SO-8
MESH OVERLAY POWER MOSFET
1/10
October 2003
STS1C1S250
I
TYPICAL R
DS(on)
(N-Channel) = 0.9
I
TYPICAL R
DS(on)
(P-Channel) = 2.1
I
GATE-SOURCE ZENER DIODE
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This complementary pair uses the Company's pro-
prietary high voltage MESH OVERLAY process
based on advanced strip layout and efficient edge
termination. Designed for high volume manufactur-
ing capability, it is ideal in lighting converters such as
CFL supplied from 120V mains.
APPLICATIONS
I
LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol
(1)Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STS1C1S250(N-Channel)
STS1C1S250(P-Channel)
250 V
250 V
<1.4
<2.8
0.80 A
0.60 A
Parameter
Value
Unit
N-CHANNEL
P-CHANNEL
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
1
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
250
250
V
250
250
V
Gate- source Voltage
±25
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
0.75
0.60
A
0.47
0.38
A
Drain Current (pulsed)
3
2.4
A
Total Dissipation at T
C
= 25°C Single Operation
Total Dissipation at T
C
= 25°C Dual Operation
1.6
2
W
T
stg
T
j
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
SO-8
INTERNAL SCHEMATIC DIAGRAM
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STS1DN45K3 功能描述:MOSFET Dual N-Ch 450V 0.5A 3.2 ohm SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STS1DNC45 功能描述:MOSFET N-Ch 450 Volt 0.4 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STS1DNF20 功能描述:MOSFET N-Ch Mosfet APM Power Mosfet SO 08 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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STS1HNC60 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET
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