參數(shù)資料
型號: STS1C1S250
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
中文描述: N溝道250V - 0.9Ohm - 0.75A的SO - 8 P溝道250V - 2.1Ohm - 0.6A的SO - 8封裝功率MOSFET網(wǎng)格密胺
文件頁數(shù): 10/10頁
文件大?。?/td> 447K
代理商: STS1C1S250
STS1C1S250
10/10
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STS1DN45K3 功能描述:MOSFET Dual N-Ch 450V 0.5A 3.2 ohm SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STS1DNC45 功能描述:MOSFET N-Ch 450 Volt 0.4 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STS1DNF20 功能描述:MOSFET N-Ch Mosfet APM Power Mosfet SO 08 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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STS1HNC60 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET