參數(shù)資料
型號(hào): STS2DNE60
廠商: 意法半導(dǎo)體
英文描述: N-Channel 60V-0.180Ω-2A SO-8 STripFETTM Power MOSFET(N溝道功率MOSFET)
中文描述: N溝道60V的,0.180Ω- 2A型的SO - 8 STripFETTM功率MOSFET(不適用溝道功率MOSFET的)
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 70K
代理商: STS2DNE60
STS2DNE60
N - CHANNEL 60V - 0.180
- 2A SO-8
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.18
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size
"
strip-based process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
rugged
avalanche
manufacturing
APPLICATIONS
I
DC MOTOR DRIVE
I
DC-DC CONVERTERS
I
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
I
POWER MANAGEMENT IN
PORTABLE/DESKTOP PC
s
INTERNAL SCHEMATIC DIAGRAM
December 1998
SO-8
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate-source Voltage
Drain Current (continuous) at Tc = 25
o
C
Single Operation
Drain Current (continuous) at T
c
= 100
o
C
Single Operation
±
20
V
I
D
2
1.3
A
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C Dual Operation
Total Dissipation at T
c
= 25
o
C Sinlge Operation
(
) Pulse width limited by safe operating area
8
A
P
tot
2
1.6
W
W
TYPE
V
DSS
60 V
R
DS(on)
< 0.23
I
D
2 A
STS2DNE60
1/5
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