參數(shù)資料
型號(hào): STP35NF10
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
中文描述: N溝道100V的- 0.030ohm - 40A至- 220 / D2PAK封裝,低柵極電荷STripFET⑩功率MOSFET
文件頁數(shù): 3/10頁
文件大?。?/td> 466K
代理商: STP35NF10
3/10
STP35NF10
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 50V, I
D
= 17.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 80V, I
D
=35A,V
GS
= 10V
Min.
Typ.
Max.
Unit
17
ns
t
r
Rise Time
60
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
55
nC
Gate-Source Charge
12
nC
Gate-Drain Charge
20
nC
Parameter
Test Conditions
V
DD
= 50V, I
D
= 17.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
60
15
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
40
A
Source-drain Current (pulsed)
160
A
Forward On Voltage
I
SD
= 35 A, V
GS
= 0
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 35 A, di/dt = 100A/μs,
V
DD
= 25V, T
j
= 150°C
(see test circuit, Figure 5)
160
720
9
ns
nC
A
Thermal Impedence
Safe Operating Area
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