參數(shù)資料
型號(hào): STB3NA60-1
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
中文描述: ? -快速通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 115K
代理商: STB3NA60-1
STB3NA60-1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.7
I
AVALANCHERUGGED TECHNOLOGY
I
±
30V GATE TO SOURCE VOLTAGERATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
600
V
V
DGR
600
±
30
2.9
V
V
GS
I
D
V
A
I
D
1.8
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
11.6
A
80
W
0.64
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
TYPE
V
DSS
R
DS(on)
< 4
I
D
STB3NA60-1
600 V
2.9 A
March 1996
123
I2PAK
TO-262
1/9
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