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參數(shù)資料
| 型號(hào)： | STB3NA60-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 115K |
| 代理商： | STB3NA60-1 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.56
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
2.9
A
E
AS
42
mJ
E
AR
1.6
mJ
I
AR
1.8
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
600
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
30 V
T
c
= 125
o
C
250
1000
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
I
D
= 1.5 A
I
D
= 1.5 A T
C
= 100
o
C
3.3
4
8
I
D(on)
On State Drain Current
2.9
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.5 A
1
2
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
380
57
17
500
75
23
pF
pF
pF
STB3NA60-1
2/9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB3NA80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STB3NA80-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-262VAR |
| STB3NA80T4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-263AB |
| STB3NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET |
| STB3NB60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.3A I(D) | TO-262AA |
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