參數(shù)資料
型號(hào)： STB3NA80
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
中文描述： ? -快速通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 127K
代理商： STB3NA80
STB3NA80
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPICALR
DS(on)
= 3.5
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHETESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGESPREAD
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE(SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWERPACKAGE IN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCHMODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
800
V
V
DGR
800
V
V
GS
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
±
30
3.1
V
I
D
I
D
A
2
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
12.5
A
P
tot
100
W
Derating Factor
1.25
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limitedby safe operating area
150
TYPE
V
DSS
R
DS(on)
< 4.5
I
D
STB3NA80
800 V
3.1 A
October1995
123
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10
相關(guān)PDF資料
PDF描述
STB3NA80T4 Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
STB3NB60 N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET
STB3NC90 N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET
STB3NC90Z-1 N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STB3NC90Z N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB3NA80-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-262VAR
STB3NA80T4 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-263AB
STB3NB60 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET
STB3NB60-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.3A I(D) | TO-262AA
STB3NB60T4 功能描述:MOSFET N-Ch 600 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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