參數(shù)資料
型號: STB3NC90Z-1
廠商: 意法半導體
英文描述: N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET
中文描述: N溝道900V - 3.2ohm - 3.5A的TO-220/TO-220FP/I2PAK齊保護的PowerMESH⑩三MOSFET的
文件頁數(shù): 1/9頁
文件大?。?/td> 418K
代理商: STB3NC90Z-1
1/9
May 2001
STB3NC90Z
N-CHANNEL 900V - 3.2
- 3.5A D
2
PAK
Zener-Protected PowerMESHIII MOSFET
(1)I
SD
3.5A, di/dt
100A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX
(*)
.
Limited only by maximum temperature allowed
I
TYPICAL R
DS
(on) = 3.2
I
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
I
GS
Gate-source Current (*)
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
dv/dt
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB3NC90
900V
< 3.5
3.5 A
Parameter
Value
Unit
900
V
900
V
± 25
V
3.5
A
2.2
A
14
A
100
W
0.8
W/°C
±50
mA
2.5
KV
3
V/ns
–65 to 150
°C
150
°C
D
2
PAK
1
3
相關PDF資料
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STB3NC90Z N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET
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