參數(shù)資料
型號: STB3NC90Z-1
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET
中文描述: N溝道900V - 3.2ohm - 3.5A的TO-220/TO-220FP/I2PAK齊保護(hù)的PowerMESH⑩三MOSFET的
文件頁數(shù): 2/9頁
文件大?。?/td> 418K
代理商: STB3NC90Z-1
STB3NC90Z
2/9
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.25
62
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
3.5
Unit
A
220
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
900
Typ.
Max.
Unit
V
I
D
= 1 mA, V
GS
= 0
1
V/°C
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±20V
±10
μA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 1.75 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
3.2
3.5
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
3.5
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 1.75A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
3
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
Input Capacitance
1250
pF
Output Capacitance
78
pF
C
rss
Reverse Transfer
Capacitance
7
pF
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