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參數(shù)資料
| 型號(hào)： | STB3NA80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | STB3NA80 |
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consequences of use ofsuch informationnor forany infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication orotherwise under any patentorpatentrightsof SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subjectto change withoutnotice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorized for use as criticalcomponents in lifesupportdevices or systems withoutexpress
writtenapprovalof SGS-THOMSON Microelectonics.
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STB3NA80
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB3NA80T4 | Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes |
| STB3NB60 | N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET |
| STB3NC90 | N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB3NC90Z-1 | N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB3NC90Z | N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB3NA80-1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-262VAR |
| STB3NA80T4 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-263AB |
| STB3NB60 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET |
| STB3NB60-1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.3A I(D) | TO-262AA |
| STB3NB60T4 | 功能描述:MOSFET N-Ch 600 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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