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參數(shù)資料
| 型號： | STB3NA60-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強型功率MOS器件 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 115K |
| 代理商： | STB3NA60-1 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
R
G
= 18
(see test circuit, figure 3)
V
DD
= 400 V
R
G
= 18
(see test circuit, figure 5)
I
D
= 3 A
V
DD
= Max Rating x 0.8
I
D
= 1.5 A
V
GS
= 10 V
14
25
20
35
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 3 A
V
GS
= 10 V
300
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS
= 10 V
22
6
9
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
R
G
= 18
(see test circuit, figure 5)
I
D
= 3 A
V
GS
= 10 V
13
24
12
18
34
17
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
2.9
11.6
A
A
V
SD
(
)
t
rr
I
SD
= 2.9 A
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3 A
V
DD
= 100 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
460
5.6
24
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimited by safe operating area
Safe OperatingArea
Thermal Impedance
STB3NA60-1
3/9
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相關(guān)代理商/技術(shù)參數(shù) |
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| STB3NA80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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| STB3NA80T4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-263AB |
| STB3NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET |
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