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參數(shù)資料
| 型號： | STP35NF10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道100V的- 0.030ohm - 40A至- 220 / D2PAK封裝，低柵極電荷STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 466K |
| 代理商： | STP35NF10 |
1/10
April 2003
STP35NF10
STB35NF10
N-CHANNEL 100V - 0.030
- 40A TO-220 / D
2
PAK
LOW GATE CHARGE STripFET POWER MOSFET
(1) I
SD
≤
35A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25°C, I
D
= 20A, V
DD
= 80V
I
TYPICAL R
DS
(on) = 0.030
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP35NF10
STB35NF10
100 V
100 V
< 0.035
< 0.035
40 A
40 A
Parameter
Value
Unit
100
V
100
V
±20
V
40
A
28
A
160
A
115
W
0.77
13
W/°C
V/ns
300
mJ
– 55 to 175
°C
TO-220
1
2
3
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
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| STP360N4F6 | 功能描述:MOSFET N-CH 40V TO-220 制造商:stmicroelectronics 系列:DeepGATE?，STripFET? VI 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時）:120A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:1.8 毫歐 @ 60A，10V 不同 Id 時的 Vgs（th）（最大值）:4.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:340nC @ 10V 不同 Vds 時的輸入電容（Ciss）:17930pF @ 25V 功率 - 最大值:300W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應商器件封裝:TO-220 標準包裝:50 |
| STP36N05L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP36N05LFI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP36N06 | 功能描述:MOSFET TO-220 N-CH 60V 18A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP36N06FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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