參數(shù)資料
型號(hào): STGB20NB41LZ
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT
中文描述: N通道鉗位20A條- DPAK封裝IGBT的內(nèi)部鉗位PowerMESH
文件頁數(shù): 9/9頁
文件大小: 258K
代理商: STGB20NB41LZ
9/9
STGB20NB41LZ
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGB20NB41LZT4 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB20NC60V 功能描述:IGBT 晶體管 30 A 600V FAST IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB20NC60VT4 功能描述:IGBT 晶體管 30 A 600V FAST IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB20V60DF 功能描述:IGBT 600V 40A 167W D2PAK 制造商:stmicroelectronics 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 IGBT 類型:溝槽型場截止 電壓 - 集射極擊穿(最大值):600V 電流 - 集電極(Ic)(最大值):40A 脈沖電流 - 集電極 (Icm):80A 不同?Vge,Ic 時(shí)的?Vce(on):2.2V @ 15V,20A 功率 - 最大值:167W 開關(guān)能量:200μJ(開),130μJ(關(guān)) 輸入類型:標(biāo)準(zhǔn) 柵極電荷:116nC 25°C 時(shí) Td(開/關(guān))值:38ns/149ns 測試條件:400V,20A,15V 反向恢復(fù)時(shí)間(trr):40ns 封裝/外殼:TO-263-3,D2Pak(2 引線+接片),TO-263AB 安裝類型:表面貼裝 供應(yīng)商器件封裝:D2PAK 標(biāo)準(zhǔn)包裝:1
STGB20V60F 功能描述:IGBT 600V 40A 167W D2PAK 制造商:stmicroelectronics 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 IGBT 類型:溝槽型場截止 電壓 - 集射極擊穿(最大值):600V 電流 - 集電極(Ic)(最大值):40A 脈沖電流 - 集電極 (Icm):80A 不同?Vge,Ic 時(shí)的?Vce(on):2.2V @ 15V,20A 功率 - 最大值:167W 開關(guān)能量:200μJ(開),130μJ(關(guān)) 輸入類型:標(biāo)準(zhǔn) 柵極電荷:116nC 25°C 時(shí) Td(開/關(guān))值:38ns/149ns 測試條件:400V,20A,15V 反向恢復(fù)時(shí)間(trr):- 封裝/外殼:TO-263-3,D2Pak(2 引線+接片),TO-263AB 安裝類型:表面貼裝 供應(yīng)商器件封裝:D2PAK 標(biāo)準(zhǔn)包裝:1