參數(shù)資料
型號： STB35NF10
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
中文描述： N溝道100V的- 0.030ohm - 40A至- 220 / D2PAK封裝，低柵極電荷STripFET⑩功率MOSFET
文件頁數(shù)： 3/10頁
文件大?。?/td> 466K
代理商： STB35NF10
3/10
STP35NF10
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 50V, I
D
= 17.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 80V, I
D
=35A,V
GS
= 10V
Min.
Typ.
Max.
Unit
17
ns
t
r
Rise Time
60
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
55
nC
Gate-Source Charge
12
nC
Gate-Drain Charge
20
nC
Parameter
Test Conditions
V
DD
= 50V, I
D
= 17.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
60
15
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
40
A
Source-drain Current (pulsed)
160
A
Forward On Voltage
I
SD
= 35 A, V
GS
= 0
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 35 A, di/dt = 100A/μs,
V
DD
= 25V, T
j
= 150°C
(see test circuit, Figure 5)
160
720
9
ns
nC
A
Thermal Impedence
Safe Operating Area
相關(guān)PDF資料
PDF描述
STB35NF10T4 THERMISTOR PTC 6V .35A RESETTABL
STP35NF10 N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
STB3NA60-1 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STB3NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STB3NA80T4 Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB35NF10_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET? II Power MOSFET
STB35NF10T4 功能描述:MOSFET N-Ch 100 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB-360S 制造商:HellermannTyton 功能描述:
STB36NF02L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 20V - 0.016 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
STB36NF02LT4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 36A I(D) | TO-263AB
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*