參數(shù)資料
型號： STB35NF10T4
元件分類： 熱敏電阻
英文描述： THERMISTOR PTC 6V .35A RESETTABL
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 40A條（?。﹟對263AB
文件頁數(shù)： 1/10頁
文件大小： 466K
代理商： STB35NF10T4
1/10
April 2003
STP35NF10
STB35NF10
N-CHANNEL 100V - 0.030
- 40A TO-220 / D
2
PAK
LOW GATE CHARGE STripFET POWER MOSFET
(1) I
SD
≤
35A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25°C, I
D
= 20A, V
DD
= 80V
I
TYPICAL R
DS
(on) = 0.030
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP35NF10
STB35NF10
100 V
100 V
< 0.035
< 0.035
40 A
40 A
Parameter
Value
Unit
100
V
100
V
±20
V
40
A
28
A
160
A
115
W
0.77
13
W/°C
V/ns
300
mJ
– 55 to 175
°C
TO-220
1
2
3
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
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