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參數(shù)資料
| 型號： | SST29VE010A |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 1 Megabit (128K x 8) Page Mode EEPROM |
| 中文描述： | 1兆位（128K的× 8）頁模式的EEPROM |
| 文件頁數(shù)： | 3/26頁 |
| 文件大?。?/td> | 273K |
| 代理商： | SST29VE010A |
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3
1999 Silicon Storage Technology, Inc.
303-01 2/99
1 Megabit Page Mode EEPROM
SST29EE010A / SST29LE010A / SST29VE010A
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Write Operation Status Detection
The SST29EE010A/29LE010A/29VE010A provide two
software means to detect the completion of a write cycle,
in order to optimize the system write cycle time. The
software detection includes two status bits: Data# Polling
(DQ
7
) and Toggle Bit (DQ
6
). The end of write detection
mode is enabled after the rising WE# or CE# whichever
occurs first, which initiates the internal write cycle.
The actual completion of the nonvolatile write is asyn-
chronous with the system; therefore, either a Data#
Polling or Toggle Bit read may be simultaneous with the
completion of the write cycle. If this occurs, the system
may possibly get an erroneous result, i.e., valid data may
appear to conflict with either DQ
7
or DQ
6
. In order to
prevent spurious rejection, if an erroneous result occurs,
the software routine should include a loop to read the
accessed location an additional two (2) times. If both
reads are valid, then the device has completed the write
cycle, otherwise the rejection is valid.
Data# Polling (DQ
7
)
When the SST29EE010A/29LE010A/29VE010A are in
the internal write cycle, any attempt to read DQ
7
of the
last byte loaded during the byte-load cycle will receive
the complement of the true data. Once the write cycle is
completed, DQ
7
will show true data. The device is then
ready for the next operation. See Figure 6 for Data#
Polling timing diagram and Figure 14 for a flowchart.
Toggle Bit (DQ
6
)
During the internal write cycle, any consecutive attempts
to read DQ
6
will produce alternating 0’s and 1’s, i.e.
toggling between 0 and 1. When the write cycle is
completed, the toggling will stop. The device is then
ready for the next operation. See Figure 7 for Toggle Bit
timing diagram and Figure 14 for a flowchart. The initial
read of the Toggle Bit will typically be a “1”.
Data Protection
The SST29EE010A/29LE010A/29VE010A provide both
hardware and software features to protect nonvolatile
data from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than
5 ns will not initiate a write cycle.
V
CC
Power Up/Down Detection: The write operation is
inhibited when V
CC
is less than 2.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the write operation. This prevents inad-
vertent writes during power-up or power-down.
Software Data Protection (SDP)
The SST29EE010A/29LE010A/29VE010A provide the
JEDEC approved software data protection scheme for
all data alteration operations, i.e., Write and Chip Erase.
With this scheme, any Write operation requires the
inclusion of a series of three byte-load operations to
precede the data loading operation. The three byte-load
sequence is used to initiate the write cycle, providing
optimal protection from inadvertent write operations,
e.g., during the system power-up or power-down.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST29LE010 | 1 Mbit (128K x8) Page-Mode EEPROM(1 M(128K x8)按頁存取模式EEPROM) |
| SST29VE010 | 1 Mbit (128K x8) Page-Mode EEPROM(1 M(128K x8)按頁存取模式EEPROM) |
| SST29LE512-90-4I-PH | 512 Kbit (64K x8) Page-Mode EEPROM |
| SST29VE512-250-4C-EH | 512 Kbit (64K x8) Page-Mode EEPROM |
| SST29SF020-55-4C-NHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST29VE020-200-4C-EH | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE020-200-4C-EHE | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE020-200-4C-NH | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE020-200-4C-NHE | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE020-200-4I-EH | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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