參數(shù)資料
型號： SST29VE010A
廠商： Silicon Storage Technology, Inc.
英文描述： 1 Megabit (128K x 8) Page Mode EEPROM
中文描述： 1兆位（128K的× 8）頁模式的EEPROM
文件頁數(shù)： 1/26頁
文件大?。?/td> 273K
代理商： SST29VE010A
1 Megabit (128K x 8) Page Mode EEPROM
SST29EE010A / SST29LE010A / SST29VE010A
Data Sheet
1999 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
303-01 2/99
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FEATURES:
Single Voltage Read and Write Operations
– 5.0V-only for the SST29EE010A
– 3.0-3.6V for the SST29LE010A
– 2.7-3.6V for the SST29VE010A
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 3.0/2.7V
– Standby Current: 10 μA (typical)
Fast Page Write Operation
– 128 Bytes per Page, 1024 Pages
– Page Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte Write Cycle Time:
(typical)
39 μs
Fast Read Access Time
– 5.0V-only operation: 90 and 120 ns
– 3.0-3.6V operation: 150 and 200 ns
– 2.7-3.6V operation: 200 and 250 ns
Latched Address and Data
Automatic Write Timing
– Internal V
PP
Generation
End of Write Detection
– Toggle Bit
– Data# Polling
Hardware and Software Data Protection
TTL I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32 Pin PDIP
– 32-Pin PLCC
– 32-Pin TSOP (8mm x 20mm & 8mm x 14mm)
PRODUCT DESCRIPTION
The SST29EE010A/29LE010A/29VE010A are 128K x 8
CMOS Page Write EEPROMs manufactured with SST’s
proprietary, high performance CMOS SuperFlash tech-
nology. The split-gate cell design and thick oxide tunnel-
ing injector attain better reliability and manufacturability
compared with alternate approaches. The
SST29EE010A/29LE010A/29VE010A write with a
single power supply. Internal Erase/Program is transpar-
ent to the user. The SST29EE010A/29LE010A/
29VE010A conform to JEDEC standard pinouts for byte-
wide memories.
Featuring high performance page write, the
SST29EE010A/29LE010A/29VE010A provide a typical
byte-write time of 39 μsec. The entire memory, i.e., 128
KBytes, can be written page-by-page in as little as 5
seconds, when using interface features such as Toggle
Bit or Data# Polling to indicate the completion of a write
cycle. To protect against inadvertent write, the
SST29EE010A/29LE010A/29VE010A have on-chip
hardware and software data protection schemes. De-
signed, manufactured, and tested for a wide spectrum of
applications, the SST29EE010A/29LE010A/29VE010A
are offered with a guaranteed page write endurance of
10
4
cycles. Data retention is rated at greater than 100
years.
The SST29EE010A/29LE010A/29VE010A are suited
for applications that require convenient and economical
updating of program, configuration, or data memory. For
all system applications, the SST29EE010A/29LE010A/
29VE010A significantly improve performance and reli-
ability, while lowering power consumption. The
SST29EE010A/29LE010A/29VE010A improve flexibil-
ity while lowering the cost for program, data, and configu-
ration storage applications.
To meet high density, surface mount requirements, the
SST29EE010A/29LE010A/29VE010A are offered in 32-
pin TSOP and 32-lead PLCC packages. A 600-mil, 32-
pin PDIP package is also available. See Figures 1 and 2
for pinouts.
Device Operation
The SST page mode EEPROM offers in-circuit electrical
write capability. The SST29EE010A/29LE010A/
29VE010A does not require separate Erase and
Program operations. The internally timed write cycle
executes both erase and program transparently to the
user. The SST29EE010A/29LE010A/29VE010A have
industry standard Software Data Protection. The
SST29EE010A/29LE010A/29VE010A are compatible
with industry standard EEPROM pinouts and
functionality.
Read
The Read operations of the SST29EE010A/29LE010A/
29VE010A are controlled by CE# and OE#, both have to
be low for the system to obtain data from the outputs.
相關PDF資料
PDF描述
SST29LE010 1 Mbit (128K x8) Page-Mode EEPROM(1 M(128K x8)按頁存取模式EEPROM)
SST29VE010 1 Mbit (128K x8) Page-Mode EEPROM(1 M(128K x8)按頁存取模式EEPROM)
SST29LE512-90-4I-PH 512 Kbit (64K x8) Page-Mode EEPROM
SST29VE512-250-4C-EH 512 Kbit (64K x8) Page-Mode EEPROM
SST29SF020-55-4C-NHE 2 Mbit / 4 Mbit (x8) Small-Sector Flash
相關代理商/技術參數(shù)
參數(shù)描述
SST29VE020-200-4C-EH 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE020-200-4C-EHE 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE020-200-4C-NH 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE020-200-4C-NHE 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE020-200-4I-EH 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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