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參數(shù)資料
| 型號： | SST29VE010 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 1 Mbit (128K x8) Page-Mode EEPROM(1 M(128K x8)按頁存取模式EEPROM) |
| 中文描述： | 1兆位（128K的× 8）頁面模式的EEPROM（1米（128K的× 8）按頁存取模式的EEPROM） |
| 文件頁數(shù)： | 1/26頁 |
| 文件大?。?/td> | 326K |
| 代理商： | SST29VE010 |
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2001 Silicon Storage Technology, Inc.
S71061-07-000
6/01
1
304
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE010
FEATURES:
Single Voltage Read and Write Operations
– 5.0V-only for SST29EE010
– 3.0-3.6V for SST29LE010
– 2.7-3.6V for SST29VE010
Superior Reliability
–
Endurance: 100,000 Cycles (typical)
–
Greater than 100 years Data Retention
Low Power Consumption
–
Active Current: 20 mA (typical) for 5V and 10 mA
(typical) for 3.0/2.7V
–
Standby Current: 10 μA (typical)
Fast Page-Write Operation
–
128 Bytes per Page, 1024 Pages
–
Page-Write Cycle: 5 ms (typical)
–
Complete Memory Rewrite: 5 sec (typical)
–
Effective Byte-Write Cycle Time: 39 μs (typical)
Fast Read Access Time
–
5.0V-only operation: 70 and 90 ns
–
3.0-3.6V operation: 150 and 200 ns
–
2.7-3.6V operation: 200 and 250 ns
Latched Address and Data
Automatic Write Timing
–
Internal V
PP
Generation
End of Write Detection
–
Toggle Bit
–
Data# Polling
Hardware and Software Data Protection
Product Identification can be accessed via
Software Operation
TTL I/O Compatibility
JEDEC Standard
–
Flash EEPROM Pinouts and command sets
Packages Available
–
32-lead PLCC
–
32-lead TSOP (8mm x 14mm, 8mm x 20mm)
–
32-pin PDIP
PRODUCT DESCRIPTION
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST
’
s proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE010 conform to JEDEC stan-
dard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/LE/
VE010 provide a typical Byte-Write time of 39 μsec. The
entire memory, i.e., 128 KBytes, can be written page-by-
page in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of a Write cycle. To protect against inadvertent write,
the SST29EE/LE/VE010 have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, the
SST29EE/LE/VE010 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST29EE/LE/VE010 are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
the SST29EE/LE/VE010 significantly improve performance
and reliability, while lowering power consumption. The
SST29EE/LE/VE010 improve flexibility while lowering the
cost for program, data, and configuration storage applica-
tions.
To meet high density, surface mount requirements, the
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE010 does not require
separate Erase and Program operations. The internally
timed write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE010 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE010 are compatible with industry standard EEPROM
pinouts and functionality.
SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST29LE512-90-4I-PH | 512 Kbit (64K x8) Page-Mode EEPROM |
| SST29VE512-250-4C-EH | 512 Kbit (64K x8) Page-Mode EEPROM |
| SST29SF020-55-4C-NHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| SST29SF020-55-4I-WHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| SST29SF040-55-4C-NHE | 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST29VE010-150-4C-EHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-150-4C-NHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-150-4I-NHE | 功能描述:閃存 1M (128K x 8) 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-200-4C-EH | 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-200-4C-EHE | 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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