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參數(shù)資料
| 型號(hào)： | SSM3J305T |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications |
| 中文描述： | 場(chǎng)效應(yīng)晶體管硅P溝道MOS型高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | SSM3J305T |
SSM3J305T
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J305T
High-Speed Switching Applications
4 V drive
Low ON-resistance:
R
on
= 477 m
(max) (@V
GS
=
4 V)
R
on
= 237 m
(max) (@V
GS
=
10 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
T
ch
T
stg
30
V
Gate–source voltage
±
20
1.7
3.4
V
DC
Drain current
Pulse
A
Drain power dissipation
700
mW
Channel temperature
150
°
C
°
C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
55 to 150
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
30
Drain–source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
+
20 V
15
V
Drain cutoff current
I
DSS
V
DS
=
30 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
16 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
5 V, I
D
=
1 mA
1.2
2.6
V
Forward transfer admittance
Y
fs
V
DS
=
5 V, I
D
=
0.65 A
(Note 2)
0.8
1.5
S
I
D
=
0.65 A, V
GS
=
10 V
(Note 2)
177
237
Drain–source ON-resistance
R
DS (ON)
I
D
=
0.4 A, V
GS
=
4 V
(Note 2)
357
477
m
Ω
Input capacitance
C
iss
137
Output capacitance
C
oss
39
Reverse transfer capacitance
C
rss
Q
g
V
DS
=
15 V, V
GS
=
0, f
=
1 MHz
20
pF
Total Gate Charge
1.3
Gate
Source Charge
Gate
Drain Charge
Q
gs
0.7
Q
gd
V
DS
=
15 V, I
DS
=
1.7 A
V
GS
=
4 V
0.6
nC
Turn-on time
t
on
15
Switching time
Turn-off time
t
off
V
DD
=
15 V, I
D
=
0.65 A,
V
GS
=
0 to
4 V, R
G
=
10
14
ns
Drain–source forward voltage
V
DSF
I
D
=
1.7 A, V
GS
=
0 V (Note 3)
0.85
1.2
V
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
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