- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374931 > SSM3J306T (Toshiba Corporation) Power management switch Applications PDF資料下載
參數(shù)資料
| 型號： | SSM3J306T |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power management switch Applications |
| 中文描述： | 電源管理開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 174K |
| 代理商： | SSM3J306T |
SSM3J306T
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J306T
Power management switch Applications
4 V drive
Low ON-resistance:
R
on
= 225 m
(max) (@V
GS
=
4 V)
R
on
= 117 m
(max) (@V
GS
=
10 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
T
ch
T
stg
30
V
Gate–source voltage
±
20
2.4
4.8
V
DC
Drain current
Pulse
A
Drain power dissipation
700
mW
Channel temperature
150
°
C
°
C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
55 to 150
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
30
Drain–source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
+
20 V
15
V
Drain cutoff current
I
DSS
V
DS
=
30 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
16 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
5 V, I
D
=
1 mA
1.2
2.6
V
Forward transfer admittance
Y
fs
V
DS
=
5 V, I
D
=
1 A
(Note 2)
1.6
3.1
S
I
D
=
1 A, V
GS
=
10 V
(Note 2)
80
117
Drain–source ON-resistance
R
DS (ON)
I
D
=
0.5 A, V
GS
=
4 V
(Note 2)
160
225
m
Ω
Input capacitance
C
iss
280
Output capacitance
C
oss
80
Reverse transfer capacitance
C
rss
V
DS
=
15 V, V
GS
=
0, f
=
1 MHz
45
pF
Total Gate Charge
Q
g
2.5
Gate-Source Charge
Q
gs
1.3
Gate-Drain Charge
Q
gd
V
DS
= -15 V, I
DS
= -2.4 A
V
GS
= -4 V
1.2
nC
Turn-on time
t
on
16
Switching time
Turn-off time
t
off
V
DD
=
15 V, I
D
=
1 A,
V
GS
=
0 to
4 V, R
G
=
10
35
ns
Drain–source forward voltage
V
DSF
I
D
=
2.4 A, V
GS
=
0 V (Note 2)
0.8
1.2
V
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSM3K01T | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| SSM3K02F | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| SSM3K02T | High Speed Switching Applications |
| SSM3K03FE | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| SSM3K03FV | High Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM3J306T(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSF P CH 30V 2.4A TSM 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-Ch Sm Sig FET Id -2.4A -30V -20VGS |
| SSM3J307T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) |
| SSM3J307T(TE85L,F) | 功能描述:MOSFET Single P-ch 20V 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM3J317T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications High-Speed Switching Applications |
| SSM3J321T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。