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參數(shù)資料
| 型號： | SSM3K01T |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 163K |
| 代理商： | SSM3K01T |
SSM3K01T
2002-01-24
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
Small Package
Low on Resistance R
on
= 120 m
(max) (@V
GS
= 4 V)
: R
on
= 150 m
(max) (@V
GS
= 2.5 V)
Low Gate Threshold Voltage: V
th
= 0.6~1.1 V
Maximum Ratings
(Ta 25°C)
(@V
DS
= 3 V, I
D
= 0.1 mA)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DS
V
GSS
I
D
I
DP
(Note2)
P
D
(Note1)
T
ch
T
stg
30
10
3.2
V
V
DC
Drain current
Pulse
6.4
A
Drain power dissipation (Ta 25 C)
1250
mW
Channel temperature
Storage temperature range
150
55~150
C
C
Note1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm
2
, t 10 s)
Note2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
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