參數(shù)資料
型號: SSM3K02F
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型
文件頁數(shù): 1/5頁
文件大小: 157K
代理商: SSM3K02F
SSM3K02F
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02F
High Speed Switching Applications
Small package
Low on resistance R
on
= 200 m
(max) (V
GS
= 4 V)
: R
on
= 250 m
(max) (V
GS
= 2.5 V)
Low gate threshold voltage: V
th
= 0.6~
1
.
1
V (V
DS
= 3 V, I
D
= 0.
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
30
V
Gate-source voltage
V
GSS
10
V
DC
I
D
1.0
Drain current
Pulse
I
DP
2.0
A
Drain power dissipation
P
D
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
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