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參數(shù)資料
| 型號(hào)： | SSM3K04FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 533K |
| 代理商： | SSM3K04FV |
SSM3K04FV
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FV
High Speed Switching Applications
With built-in gate-source resistor: R
GS
= 1 M
(typ.)
2.5 V gate drive
High input impedance
Low gate threshold voltage: V
th
= 0.7~1.3 V
Optimum for high-density mounting in small packages
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
DC drain current
I
D
100
mA
Drain power dissipation (Ta
=
25
°
C)
P
D
(Note 1)
150
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 t)
Marking
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2L1B
Weight: 1.5 mg (typ.)
0.5mm
0.45mm
0.45mm
0.4mm
1
0
1
2
3
0
0
0
0.8±0.05
0
1.2±0.05
0
0
1. Gate
2. Source
3. Drain
DC
1
2
3
1
2
3
RGS
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